A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The diffusion coefficient of copper in amorphous germanium is estimated to be larger than 3 × 10-11 cm2 s-1 and the solubility to be ∼7 × 1018 cm-3 at 200°C as determined from secondary mass spectrometry. The observed solubility limit is more than eight orders of magnitude greater than that in crystalline germanium and the enthalpy of a solution of copper in amorphous germanium is estimated to be as low as 0.05 eV in the range of 20-200°C. Copper is observed to diffuse more readily in amorphous germanium than in amorphous silicon, with an activation enthalpy as low as ∼0.5 eV in the range of 20-200°C. Interstitial diffusion is assumed to prevail and the trapping enthalpy of defects retarding the motion is found to be significantly lower in amorphous germanium (0.25±0.15 eV) compared to that in amorphous silicon (∼0.8 eV). © 1998 American Vacuum Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Lawrence Suchow, Norman R. Stemple
JES
Hiroshi Ito, Reinhold Schwalm
JES
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS