Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples. When the sample length is much smaller than the mean free path the current density is proportional to the applied voltage so that the apparent low field mobility is proportional to the device length. Calculation of the apparent low field mobility for high mobility GaAs devices shows that the size effects may be important for sample lengths smaller than 2 μm. © 1981.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
E. Burstein
Ferroelectrics
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
K.A. Chao
Physical Review B