Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples. When the sample length is much smaller than the mean free path the current density is proportional to the applied voltage so that the apparent low field mobility is proportional to the device length. Calculation of the apparent low field mobility for high mobility GaAs devices shows that the size effects may be important for sample lengths smaller than 2 μm. © 1981.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Hiroshi Ito, Reinhold Schwalm
JES
Imran Nasim, Melanie Weber
SCML 2024
K.N. Tu
Materials Science and Engineering: A