Frank Stem
C R C Critical Reviews in Solid State Sciences
ESD robustness of 4 kV HBM is achieved in CMOS-on-SOI ESD protection networks in an advanced sub-0.25 μm mainstream CMOS-on-SOI technology. Design layout, body contact, floating-gate effects and novel ESD protection implementations are discussed. © 1998 Elsevier Science B.V.
Frank Stem
C R C Critical Reviews in Solid State Sciences
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering