Characterization of light emission from SiGe heterojunction bipolar transistor for photon emission microscopy applications

Light emission from SiGe heterojunction bipolar transistor (HBT) was characterized for photon emission microscopy applications. Radiative recombination dominates in non-saturation regime. It increases in saturation regime due to increased concentration of minority charge carriers in the base. Hot electron radiation dominates in avalanche and is suppressed at large collector currents due to base widening.