Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Ion-excited Auger electron emission from silicon has been investigated for 2 to 30 keV noble gas ion bombardment. It was found that Si L shell excitation is mostly due to symmetric SiSi collisions. The Auger spectrum is characterized by several relatively narrow (but Doppler broadened) L2, 3MN lines originating from sputtered atoms and a broad bulk-like L2, 3VV line. Comparison between the L2, 3VV line and the electron-excited L2, 3VV line indicates that the density and/or the population of states in a collision cascade is markedly different from the unperturbed case. © 1979.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering