Channeling of ions near the silicon 〈001〉 axis

J.F. Ziegler; R.F. Lever

doi:10.1063/1.95630

Applied Physics Letters

Paper

01 Jan 1985

Channeling of ions near the silicon 〈001〉 axis

View publication

Abstract

The first experimental mapping of ion beam channels near the Si 〈001〉 axis is reported. All features are identified by theoretical plots of silicon planar channels and axial channels.

Paper

Microanalysis of fluorine using the ¹⁹F(p, α₀)¹⁶O reaction

I. Khubeis, J.F. Ziegler

Nuclear Inst. and Methods in Physics Research, B

Paper

Quantitative analysis of hydrogen in glow discharge amorphous silicon

M.H. Brodsky, M.A. Frisch, et al.

Applied Physics Letters

Paper

The reaction of oxygen with silicon and germanium at elevated temperatures by weight loss measurement

R.F. Lever, H.R. Wendt

Surface Science

Paper

Effects of ion radiation damage on the magnetic domain structure of amorphous GdSingle Bond signCo alloys

R.J. Gambino, J.F. Ziegler, et al.

Applied Physics Letters

View all publications

Abstract

Related

Microanalysis of fluorine using the 19F(p, α0)16O reaction

Quantitative analysis of hydrogen in glow discharge amorphous silicon

The reaction of oxygen with silicon and germanium at elevated temperatures by weight loss measurement

Effects of ion radiation damage on the magnetic domain structure of amorphous GdSingle Bond signCo alloys

Microanalysis of fluorine using the ¹⁹F(p, α₀)¹⁶O reaction