R. Ghez, M.B. Small
JES
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
R. Ghez, M.B. Small
JES
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules