R. Ghez, J.S. Lew
Journal of Crystal Growth
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
R. Ghez, J.S. Lew
Journal of Crystal Growth
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JES
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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