Analysis of BTI, SHE Induced BTI and HCD under Full V_G/V_D Space in GAA Nano-Sheet N and P FETs

An ultrafast (10ps delay) characterization method is used to measure threshold voltage shift (ΔVT) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress in N and P channel Gate All Around (GAA) NSFETs. ΔVT time kinetics at various gate bias (VG) and temperature (T) for BTI and at various VG and drain bias (VD) for HCD is analyzed. Contribution from Self Heat Effect (SHE) induced BTI to overall HCD is estimated under full VG/VD space and pure HCD contribution is determined.