Aharonov-Bohm effect in thin, normal-metal films containing small voids

The magnetoresistance of thin films containing small voids was found to saturate at high magnetic fields in contrast to the logarithmic behavior predicted by two-dimensional weak-localization- electron-interaction theory. A new model, which considers the Aharonov-Bohm interference of electrons traveling around the voids, is found to provide very reasonable fits to the data. © 1986 The American Physical Society.