R. Ghez, J.S. Lew
Journal of Crystal Growth
We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained. © 1973 The American Physical Society.
R. Ghez, J.S. Lew
Journal of Crystal Growth
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