A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained. © 1973 The American Physical Society.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J.K. Gimzewski, T.A. Jung, et al.
Surface Science