Patterning of highly conducting polyaniline films
T. Graham, A. Afzali, et al.
Microlithography 2000
The running solutions and I-V characteristic of an extended Josephson junction in a state near the ohmic regime are calculated by a perturbation method. Both the voltage-driven and current-driven cases are considered and the convergence of the perturbation procedure is proved. An integral representation of the first correction, in the I-V curve, to the ohmic regime-as well as its dependence on the external magnetic field-is given and evaluated numerically for various values of the junction parameters. © 1979.
T. Graham, A. Afzali, et al.
Microlithography 2000
Shashanka Ubaru, Lior Horesh, et al.
Journal of Biomedical Informatics
M. Tismenetsky
International Journal of Computer Mathematics
R.B. Morris, Y. Tsuji, et al.
International Journal for Numerical Methods in Engineering