A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The adsorption of O2 on Ni(110) at 500 K has been studied using He diffraction. As the coverage is increased, low-coverage (3 × 1), (2 × 1), and high-coverage (3 × 1) phases are successively formed. An analysis of the diffraction intensities for the (2 × 1) and high-coverage (3 × 1) phases and a comparison with calculated electron-density contours shows that the Ni atoms are aligned in rows parallel to the [001] direction, and that the oxygen atoms are adsorbed at long bridge sites on the surface at a normal distance of ~ 0.3 Å above the Ni atoms. © 1984.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
E. Burstein
Ferroelectrics
R. Ghez, J.S. Lew
Journal of Crystal Growth
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020