Publications

3 results at ISTDM 2012

Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- - Alexander Reznicek
  - Thomas N. Adam
  - et al.
- 2012
- ISTDM 2012
Conference paper
Effect of germanium concentration on the dielectric function of strained Si _1-xGe _x films
- - Manasa Medikonda
  - Gangadhara R. Muthinti
  - et al.
- 2012
- ISTDM 2012
Conference paper
Demonstration of electroluminescence from strained Ge membrane LED
- - Donguk Nam
  - David Sukhdeo
  - et al.
- 2012
- ISTDM 2012
Conference paper