Ballistic transport of electrons and holes
- M. Heiblum
- 1988
- IEDM 1988
Conference paper
Publications
10 results at IEDM 1988
Variable-size shallow trench isolation (STI) technology with diffused sidewall doping for submicron CMOS
- B. Davari
- C. Koburger
- et al.
- 1988
- IEDM 1988
Conference paperSub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
Conference paperHigh performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Conference paperBuried-trench DRAM cell using a self-aligned epitaxy over trench technology
- N.C.-C. Lu
- T.V. Rajeevakumar
- et al.
- 1988
- IEDM 1988
Conference paperPerformance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits
- C.T. Chuang
- 1988
- IEDM 1988
Conference paperBipolar transistor scaling for minimum switching delay and energy dissipation
- J.M.C. Stork
- 1988
- IEDM 1988
Conference paperComplementary p- and n-channel quantum-well MI3SFET's
- R.A. Kiehl
- M.A. Olson
- et al.
- 1988
- IEDM 1988
Conference paperDoping of n+ and p+ polysilicon in a dual-gate CMOS process
- C.Y. Wong
- J.Y.-C. Sun
- et al.
- 1988
- IEDM 1988
Conference paperElectron beam damage of advanced silicon bipolar transistors and circuits
- Keith A. Jenkins
- J.D. Cressler
- 1988
- IEDM 1988
Conference paper