Publications

8 results at VLSI Technology 1989

Study of boron penetration through thin oxide with p⁺-polysilicon gate
- - J.Y.-C. Sun
  - C.Y. Wong
  - et al.
- 1989
- VLSI Technology 1989
Fully self-aligned epitaxial-base transistor
- - R. Schulz
  - M. Jost
  - et al.
- 1989
- VLSI Technology 1989
New technology for bipolar emitters in the deep sub-micron range
- - J.N. Burghartz
  - B.J. Ginsberg
  - et al.
- 1989
- VLSI Technology 1989
SiGe heterojunction bipolar transistors
- - J.M.C. Stork
  - G.L. Patton
  - et al.
- 1989
- VLSI Technology 1989
0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- - L.K. Wang
  - C.H. Hsu
  - et al.
- 1989
- VLSI Technology 1989
Submicron high performance bipolar technology
- - T.C. Chen
  - J.D. Cressler
  - et al.
- 1989
- VLSI Technology 1989
New preamorphization technique for very shallow p⁺-n junctions
- - B. Davari
  - E. Ganin
  - et al.
- 1989
- VLSI Technology 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- - G.L. Patton
  - D.L. Harame
  - et al.
- 1989
- VLSI Technology 1989