Temperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated GeSteven J. KoesterMartin M. Franket al.2006ISTDM 2006
Progress in SiGe technology toward fully integrated mmwave ICsB.P. GaucherS.K. Reynoldset al.2006ISTDM 2006
P-i-n diodes for monolithic millimeter wave BiCMOS applicationsBradley A. OrnerQizhi Liuet al.2006ISTDM 2006
Negative differential resistance in ultra-thin Ge-on-insulator FETsD. KazazisA. Zaslavskyet al.2006ISTDM 2006