Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
- P. Solomon
- S.E. Laux
- et al.
- 2009
- DRC 2009
Conference paper
Publications
8 results at DRC 2009
Device scaling for 15 nm node and beyond
- Ghavam G. Shahidi
- 2009
- DRC 2009
Conference paperDouble-Gate MOSFETs with aymmetric drain underlap: A device-circuit co-design and optimization perspective for SRAM
- Ashish Goel
- Sumeet Gupta
- et al.
- 2009
- DRC 2009
Conference paperSb-heterostructure backward diode detectors with ultrathin tunnel barriers
- Z. Zhang
- Ning Su
- et al.
- 2009
- DRC 2009
Conference paperExtraction of interface trap density in high-k/Ge gate stacks and determination of the charge neutrality level
- D. Bozyigit
- C. Rossel
- 2009
- DRC 2009
Conference paperRacetrack Memory: A storage class memory based on current controlled magnetic domain wall motion
- Stuart Parkin
- 2009
- DRC 2009
Conference paperHigh field transport properties of 2D and nanoribbon graphene FETs
- Kristof Tahy
- Siyuranga Koswatta
- et al.
- 2009
- DRC 2009
Conference paperVLS-grown silicon nanowire tunnel FET
- K. Moselund
- H. Ghoneim
- et al.
- 2009
- DRC 2009
Conference paper