MOVPE on patterned substrates: A new fabrication method for nanometer structure devicesYvan D. GaleuchetHugo Rothuizenet al.1991ESSDERC 1991Conference paper
GaAs opto-electronic integrated circuits for high speed optical communicationsD.L. Rogers1991ESSDERC 1991Conference paper
Strain relaxation in GeSi layers with uniform and graded compositionS.C. JainP. Balket al.1991ESSDERC 1991Conference paper
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial baseJ.N. BurghartzJ.D. Cressleret al.1991ESSDERC 1991Conference paper
Study of vertical transport through schottky-gated, laterally confined quantum-dot devicesN. BlancP. Guéretet al.1991ESSDERC 1991Conference paper
Applications of scanning tunneling microscopy to the characterization of semiconductor technologies and devicesH. SaleminkO. Albrektsen1991ESSDERC 1991Conference paper