Bistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
Paper
Publications
14468 results for Physical Sciences
Images of a microelectronic device with the X1-SPEM, a first generation scanning photoemission microscope at the National Synchrotron Light Source
- H. Ade
- J. Kirz
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperSelective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
PaperDegradation of perfluoropolyethers catalyzed by aluminum oxide
- Paul H. Kasai
- Wing T. Tang
- et al.
- 1991
- Applied Surface Science
PaperLithographic performance of an EL-3 system at 0.25μm groundrules
- T. Newman
- M.G.R. Thomson
- et al.
- 1991
- Microelectronic Engineering
PaperEmbedded cluster modeling of excited chromium impurities in halide elpasolites
- R.H. Bartram
- A.M. Woods
- et al.
- 1991
- Radiation Effects and Defects in Solids
PaperNew diluted magnetic semiconductors based on III-V compounds
- S. von Molnár
- H. Munekata
- et al.
- 1991
- Journal of Magnetism and Magnetic Materials
PaperStrain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- Microelectronic Engineering
PaperEffect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
- P.M. Mooney
- T.N. Theis
- et al.
- 1991
- Journal of Electronic Materials
PaperFormation of Cu3Si and its catalytic effect on silicon oxidation at room temperature
- L. Stolt
- A. Charai
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper