The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
- N.R. Taskar
- I.B. Bhat
- et al.
- 1991
- Journal of Crystal Growth
Paper
Publications
14468 results for Physical Sciences
MOVPE on patterned substrates: a new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Microelectronic Engineering
PaperGaas surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmas
- D.V. Podlesnik
- M.T. Schmidt
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperControlling The Optical Properties of Intersecting Waveguides: Fractionally Doping The Intersection Region
- Douglas M. Gill
- Leon McCaughan
- et al.
- 1991
- IEEE JQE
PaperDevice design issues for a high-performance technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- Microelectronic Engineering
PaperNonexponential photon echo decay of Er3+ in fluorides
- R.M. Macfarlane
- R. Wannemacher
- et al.
- 1991
- Journal of Luminescence
PaperDeposition of (100) Au, Ag, Pd, Pt, and Fe on (100) Si using different metal seed layers
- Chin-An Chang
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperCharacterization of random copolymers by size exclusion chromatography with a light scattering detector
- Patricia M. Cotts
- Richard Siemens
- 1991
- Polymer
PaperFabrication of sub-100nm dual-gate MODFETS with enhanced performance
- K.Y. Lee
- K. Ismail
- et al.
- 1991
- Microelectronic Engineering
PaperVery High-Power (425 Mw) Algaas Sqw-Grinsch Ridge Laser with Frequency-Doubled Output (41 Mw At 428 Nm)
- Heinz Jaeckel
- Gian-Luca Bona
- et al.
- 1991
- IEEE JQE
Paper