Low-temperature reflow anneals of Cu on Ru
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2011
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Electron mobility in surface- and buried-channel flatband In 0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric
- Steven J. Bentley
- Martin Holland
- et al.
- 2011
- IEEE Electron Device Letters
Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor
- Paul M. Solomon
- Isaac Lauer
- et al.
- 2011
- IEEE Electron Device Letters
Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IEEE Electron Device Letters
Contact resistance to a one-dimensional quasi-ballistic nanotube/wire
- Paul M. Solomon
- 2011
- IEEE Electron Device Letters
High-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
Evaluation of direct cu electroplating on Ru: Feature fill, parametric, and reliability
- C.-C. Yang
- B. Li
- et al.
- 2011
- IEEE Electron Device Letters
Three-dimensional chip stack with integrated decoupling capacitors and thru-si via interconnects
- Bing Dang
- Michael Shapiro
- et al.
- 2010
- IEEE Electron Device Letters
A Fast four-point sense methodology for extraction of circuit-relevant degradation parameters
- Andreas Kerber
- Eduard Cartier
- 2010
- IEEE Electron Device Letters