Transistor Matching and Fin Angle Variation in FinFET Technology
- Samarth Agarwal
- Terence B. Hook
- et al.
- 2015
- IEEE T-ED
Paper
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465 results at IEEE T-ED
Random dopant fluctuation induced variability in undoped channel si gate all around nanowire n-MOSFET
- Kaushik Nayak
- Samarth Agarwal
- et al.
- 2015
- IEEE T-ED
PaperSeries stacked multipath inductor with high self resonant frequency
- Venkata Nr Vanukuru
- Anjan Chakravorty
- 2015
- IEEE T-ED
PaperFrequency-modulated charge pumping with extremely high gate leakage
- Jason T. Ryan
- Jibin Zou
- et al.
- 2015
- IEEE T-ED
PaperOn the origin of steep i - V nonlinearity in mixed-ionic-electronic-conduction-based access devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2015
- IEEE T-ED
PaperMetal-gate granularity-induced threshold voltage variability and mismatch in Si gate-all-around nanowire n-MOSFETs
- Kaushik Nayak
- Samarth Agarwal
- et al.
- 2014
- IEEE T-ED
PaperA four-FET method for extracting mobility in FETs without field oxide
- Amlan Majumdar
- Ko-Tao Lee
- et al.
- 2014
- IEEE T-ED
PaperDesign of novel high-Q multipath parallel-stacked inductor
- Venkata Narayana Rao Vanukuru
- Anjan Chakravorty
- 2014
- IEEE T-ED
PaperCMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
PaperAnalytical compact model in verilog - A for electrostatically actuated ohmic switches
- Antonios Bazigos
- Christopher L. Ayala
- et al.
- 2014
- IEEE T-ED
Paper