High hole-mobility strained-Ge/Si 0.6Ge 0.4 P-MOSFETs with high-κ/metal gate: Role of strained-Si cap thickness
- Pouya Hashemi
- Judy L. Hoyt
- 2012
- IEEE Electron Device Letters
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Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
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- 2012
- IEEE Electron Device Letters
Double contacts for improved performance of graphene transistors
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2012
- IEEE Electron Device Letters
Enhanced performance in epitaxial graphene FETs with optimized channel morphology
- Yu-Ming Lin
- Damon B. Farmer
- et al.
- 2011
- IEEE Electron Device Letters
Characterization of Cu reflows on Ru
- C.-C. Yang
- P. Flaitz
- et al.
- 2011
- IEEE Electron Device Letters
Effects of nanoscale contacts to graphene
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEEE Electron Device Letters
On the electron and hole tunneling in a HfO2 gate stack with extreme interfacial-layer scaling
- Takashi Ando
- Ninad D. Sathaye
- et al.
- 2011
- IEEE Electron Device Letters
Microthermal stage for electrothermal characterization of phase-change memory
- Jaeho Lee
- Sangbum Kim
- et al.
- 2011
- IEEE Electron Device Letters
Aggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- Kingsuk Maitra
- Ali Khakifirooz
- et al.
- 2011
- IEEE Electron Device Letters
Channel-length-dependent transport behaviors of graphene field-effect transistors
- Shu-Jen Han
- Zhihong Chen
- et al.
- 2011
- IEEE Electron Device Letters