Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
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2351 results at Applied Physics Letters
Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
PaperThe subgap current in Nb/AlOx/Nb tunnel junctions
- F.P. Milliken
- R.H. Koch
- et al.
- 2004
- Applied Physics Letters
PaperEffects of low-energy electron irradiation on Si-insulated gate fets
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- F. Fang
- 2004
- Applied Physics Letters
PaperStimulated electronic raman scattering
- P.P. Sorokin
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- et al.
- 2004
- Applied Physics Letters
PaperReflectivity of YIG and YGG: Observation of charge transfer and crystal field transitions
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- 2004
- Applied Physics Letters
PaperAn epr study of the effect of substrate orientation on vapor-grown GaP
- R.C. Taylor
- R.S. Title
- 2004
- Applied Physics Letters
PaperBulk negative differential conductivity and traveling domains in n-type germanium
- B.J. Elliott
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- et al.
- 2004
- Applied Physics Letters
PaperFerroelectric and optical properties of KSR2NB5O 15
- E.A. Giess
- Gerald Burns
- et al.
- 2004
- Applied Physics Letters
PaperReactive processing of phase objects
- R.V. Pole
- H. Wieder
- et al.
- 2004
- Applied Physics Letters
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