Publications

358 results at Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Effects of surface oxide on the rapid thermal nitridation of Si(001)
- - M. Copel
  - R.M. Tromp
  - et al.
- 1996
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Using scanning tunneling microscopy to underst and diffraction oscillations: Fe growth on Cu(100)
- - Kevin E. Johnson
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Compositional and Electrical Properties of Si Metal-Oxide-Semiconductor Structure Prepared by Direct Photoenhanced Chemical Vapor Deposition using a Deuterium Lamp
- - E. Machler
  - E.J. Williams
  - et al.
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Mass spectrometric studies of remote helium plasma dissociation of silane
- - Joseph M. Jasinski
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma enhanced chemical vapor deposition of TiO₂ in microwave-radio frequency hybrid plasma reactor
- - Young H. Lee
  - Kevin K. Chan
  - et al.
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfaces
- - R. Ludeke
  - A. Bauer
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Simulation of surface topography evolution during plasma etching by the method of characteristics
- - Manoj Dalvie
  - Satoshi Hamaguchi
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Directed sputter deposition of AlCu: Film microstructure and microchemistry
- - S.M. Rossnagel
  - J. Moser
  - et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Infrared absorption spectroscopy for monitoring condensible gases in chemical vapor deposition applications
- - James A. O'neill
  - Michael L. Passow
  - et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
- - M. Surendra
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films