Development of 111 texture in Al films grown on SiO2/Si(001) by ultrahigh-vacuum primary-ion deposition
- Y.W. Kim
- I. Petrov
- et al.
- 1996
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Publications
358 results at Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma enhanced chemical vapor deposition of TiO2 in microwave-radio frequency hybrid plasma reactor
- Young H. Lee
- Kevin K. Chan
- et al.
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Using scanning tunneling microscopy to underst and diffraction oscillations: Fe growth on Cu(100)
- Kevin E. Johnson
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Mass spectrometric studies of remote helium plasma dissociation of silane
- Joseph M. Jasinski
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Compositional and Electrical Properties of Si Metal-Oxide-Semiconductor Structure Prepared by Direct Photoenhanced Chemical Vapor Deposition using a Deuterium Lamp
- E. Machler
- E.J. Williams
- et al.
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfaces
- R. Ludeke
- A. Bauer
- 1995
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Simulation of surface topography evolution during plasma etching by the method of characteristics
- Manoj Dalvie
- Satoshi Hamaguchi
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Fluorocarbon high-density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Directed sputter deposition of AlCu: Film microstructure and microchemistry
- S.M. Rossnagel
- J. Moser
- et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
- M. Surendra
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films