Monte carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1992
- IEDM 1992
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14209 results for Physical Sciences
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
Steady state and pulsed bias stress induced degradation in amorphous silicon thin film transistors for active-matrix liquid crystal displays
- Frank R. Libsch
- 1992
- IEDM 1992
DRAM variable retention time
- P. Restle
- J.W. Park
- et al.
- 1992
- IEDM 1992
203 μa threshold current strained V-groove lasers
- S. Tiwari
- G.D. Pettit
- et al.
- 1992
- IEDM 1992
Molecular electronics on the virgin islands
- Ari Aviram
- 1992
- Advanced Materials
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- Keith A. Jenkins
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991