Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window
- Zhouhang Jiang
- Yi Xiao
- et al.
- 2022
- VLSI Technology and Circuits 2022
Conference paper
Publications
42 results at VLSI Technology and Circuits
Fully on-chip MAC at 14nm enabled by accurate row-wise programming of PCM-based weights and parallel vector-transport in duration-format
- P. Narayanan
- S. Ambrogio
- et al.
- 2021
- VLSI 2021
Conference paper