High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- Billy L. Crowder
- John M. Fairfield
- 1970
- JES
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Polymeric Electron Beam Resists
- L.C. Scala
- H.Y. Ku
- 1969
- JES
Electron Resists for Microcircuit and Mask Production
- M. Hatzakis
- 1969
- JES
Gallium Phosphide: Its Preparation in Bulk Ingot Form
- S.E. Blum
- R.J. Chicotka
- et al.
- 1968
- JES
Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt
- S.E. Blum
- R.J. Chicotka
- 1968
- JES
Crystal Growth and Electrical Properties of Potassium-Strontium and Potassium-Lead Niobates Containing Lanthanum
- D.F. O'Kane
- G. Burns
- et al.
- 1968
- JES
Phase Diagram of the Pseudo-Binary System Ag2Te-In2Te3 and Semiconducting Properties of AgIn9Te14
- Ping-Wang Chiang
- D.F. O'Kane
- et al.
- 1967
- JES
Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide
- J.A. Aboaf
- 1967
- JES
A Source of Elemental Iodine for Vapor Transport Studies
- Samuel E. Blum
- 1967
- JES
Epitaxial Deposition of GaAs in an Argon Atmosphere
- R.C. Taylor
- 1967
- JES