Microwave Measurement of the Velocity-Field Characteristic of GaAsN. BraslauP.S. Hauge1970IEEE T-EDPaper
A Microwave Schottky-Barrier Field-Effect TransistorK.E. DrangeidS. Middlehocket al.1969IEEE T-EDPaper
Ion Implantation Doping of Si with 70 to 300 keV B. P. and AsB.L. CrowderF. Fairfield1968IEEE T-EDPaper