Effect of the back gate conduction on 0.25 μm SOI devices
- J.L. Pelloie
- D.K. Sadana
- et al.
- 1994
- IEDM 1994
Publications
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14205 results for Physical Sciences
200 mm SiGe-HBT technology for wireless and mixed-signal applications
- D.L. Harame
- K. Schonenberg
- et al.
- 1994
- IEDM 1994
mcplotgl: Graphics for the DAMOCLES Program
- S.E. Laux
- M.V. Fischetti
- 1994
- IEDM 1994
Roughness analysis of Si1-xGex films
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1994
- MRS Fall Meeting 1994
Geometric and electronic structure of fullerene film growth as a function of coverage
- B. Reihl
- 1994
- MRS Fall Meeting 1994
Studies on wear mechanism of ultrathin protective carbon overcoat by micro-wear scan technique
- T.W. Wu
- 1994
- MRS Fall Meeting 1994
Effects of catalyst promoters on the growth of single-layer carbon nanotubes
- C.-H. Kiang
- William A.III. Goddard
- et al.
- 1994
- MRS Fall Meeting 1994
Electrical characteristics of ultra-thin multi-layers of poly-Si and silicon dioxide
- K.K. Chan
- Y.H. Lee
- et al.
- 1994
- MRS Fall Meeting 1994
In-situ x-ray diffraction and resistivity analysis of CoSi2 phase formation with and without a Ti interlayer at rapid thermal annealing rates
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1994
- MRS Fall Meeting 1994
High-resolution x-ray diffraction measurements of SiGe/Si structures
- J.L. Jordan-Sweet
- P.M. Mooney
- et al.
- 1994
- MRS Fall Meeting 1994