SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
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Conference paper
Publications
14468 results for Physical Sciences
Analysis of a one-billion atom simulation of work-hardening in ductile materials
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- 2004
- MRS Proceedings 2004
Conference paperSuccessful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
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- 2004
- IEDM 2004
Conference paperVideo frame classification for learning media content understanding
- Ying Li
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- 2004
- Optics East 2004
Conference paperDigital watermarking and steganography via overlays of halftone images
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- SPIE Optical Engineering + Applications 2004
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- Ph. Avouris
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- 2004
- IEDM 2004
Conference paperDual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
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- 2004
- IEDM 2004
Conference paperPerformance data on new tunable attenuating PSM for 193nm and 157nm lithography
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- 2004
- Photomask and Next-Generation Lithography Mask Technology 2004
Conference paperNovel carbon nanotube FET design with tunable polarity
- Yu-Ming Lin
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- 2004
- IEDM 2004
Conference paperSelectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
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- 2004
- IEDM 2004
Conference paper