1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design ConstraintsTak H. NingPeter W. Cooket al.1979IEEE T-ED
MOSFET's with Polysilicon Gates Self-Aligned to the Field Isolation and to the Source and Drain RegionsV. Leo-RideoutVictor J. Silvestri1979IEEE T-ED
Modeling Diffusion and Collection of Charge from Ionizing Radiation in Silicon DevicesScott Kirkpatrick1979IEEE T-ED
1 µm MOSFET VLSI Technology: Part VII—Metal Silicide Interconnection Technology—A Future PerspectiveBilly L. CrowderStanley Zirinsky1979IEEE T-ED