1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
WA-A4 Characteristics of the Currents in p-n-p Bipolar Transistors with Degenerate Base Region
- D.D. Tang
- 1979
- IEEE T-ED
PaperWA-B2 on the Memory Behavior of Thin-Film Electroluminescent Devices
- P.M. Alt
- W.E. Howard
- et al.
- 1979
- IEEE T-ED
PaperMOSFET's with Polysilicon Gates Self-Aligned to the Field Isolation and to the Source and Drain Regions
- V. Leo-Rideout
- Victor J. Silvestri
- 1979
- IEEE T-ED
PaperMP-B5 Graded or Stepped Insulator MIS Structures (GI-MIS or SI-MIS)
- D.J. DiMaria
- D.W. Dong
- 1979
- IEEE T-ED
PaperOne-Device Cells for Dynamic Random-Access Memories: A Tutorial
- V. Leo Rideout
- 1979
- IEEE T-ED
Paper1 µm MOSFET VLSI Technology: Part VII—Metal Silicide Interconnection Technology—A Future Perspective
- Billy L. Crowder
- Stanley Zirinsky
- 1979
- IEEE T-ED
PaperHot-Electron Emission in N-Channel IGFET's
- Tak H. Ning
- Ronald R. Troutman
- 1979
- IEEE T-ED
Paper1 µm MOSFET VLSI Technology: Part 11—Device Designs and Characteristics for High-Performance Logic Applications
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1979
- IEEE T-ED
Paper1 µm MOSFET VLSI Technology: Part 1-An Overview
- Hwa-Nien Yu
- Arnold Reisman
- et al.
- 1979
- IEEE T-ED
Paper