Random distribution of islands explains the oscillatory intensity in He/Si(111)-(7 × 7)N. GarcíaJ.M. Soler1982Surface Science
General aspects of barrier layers for very-large-scale integration applications I: ConceptsP.S. Ho1982Thin Solid Films
The use of titanium-based contact barrier layers in silicon technologyC.-Y. TingM. Wittmer1982Thin Solid Films
Interaction of inert gases with a nickel (100) surface. I. Adsorption of xenonK. ChristmannJ.E. Demuth1982Surface Science
Radioactive Ni* tracer study of the nickel silicide growth mechanismJ.E.E. BaglinH.A. Atwateret al.1982Thin Solid Films
Comparison of the three classes (rare earth, refractory and near-noble) of silicide contactsR.D. ThompsonK.N. Tu1982Thin Solid Films
The direct observation of atomic surface structure and inclined planar defects in Au(111) filmsWilliam Krakow1982Thin Solid Films