High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
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14201 results for Physical Sciences
A functional FinFET-DGCMOS SRAM cell
- E. Nowak
- B. Rainey
- et al.
- 2002
- IEDM 2002
Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors
- J. Appenzeller
- J. Knoch
- et al.
- 2002
- IEDM 2002
QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries
- S.E. Laux
- A. Kumar
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Power-constrained device and technology design for the end of scaling
- David J. Frank
- 2002
- IEDM 2002
Charge trapping in high K gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2002
- IEDM 2002
The effective drive current in CMOS inverters
- M.H. Na
- E. Nowak
- et al.
- 2002
- IEDM 2002
Evaluation of the chemical-mechanical planarization (CMP) performance of silicon nitride and silicon carbide as hard mask materials for Cu-based interconnect technology
- Wei-Tsu Tseng
- Jia Lee
- et al.
- 2002
- MRS Spring Meeting 2002
The ballistic FET: Design, capacitance and speed limit
- Paul M. Solomon
- Steven E. Laux
- 2001
- IEDM 2001