Preparation and properties of polycrystalline films of (TTF)(TCNQ)T.H. ChenB.H. Schechtman1975Thin Solid FilmsPaper
Absence of non-shorting breakdown behaviour in AlSi3N4Si structuresN. KleinC.M. Osburnet al.1975Thin Solid FilmsPaper
Implanted noble gas atoms as diffusion markers in silicide formationW.K. ChuS.S. Lauet al.1975Thin Solid FilmsPaper
Molecular dynamics calculation of the isotope effect for vacancy diffusionCharles H. Bennett1975Thin Solid FilmsPaper
Electrotransport in copper alloy films and the defect mechanism in grain boundary diffusionF.M. D'HeurleA. Gangulee1975Thin Solid FilmsPaper
On the direct measurement of diffusion at temperatures less than 0.5 TmD. Gupta1975Thin Solid FilmsPaper
Some features of the behavior of misfit dislocations during diffusionJ.W. Matthews1975Thin Solid FilmsPaper