Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
PaperNoncontact Internal Waveform Measurements with Picosecond Time Resolution on a 0.5-/xm CMOS SRAM
- Yvon Pastol
- Jean-Marc Halbout
- et al.
- 1988
- IEEE Electron Device Letters
PaperUnpinned GaAs MOS Capacitors and Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1988
- IEEE Electron Device Letters
PaperHighspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters
PaperHigh Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
PaperHeterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts
- Sandip Tiwari
- Alyce Ginzberg
- et al.
- 1988
- IEEE Electron Device Letters
PaperA New Effect at High Currents in Heterostructure Bipolar Transistors
- Sandip Tiwari
- 1988
- IEEE Electron Device Letters
Paperp-Channel Quantum-Well Heterostructure MI3 SFET
- Richard A. Kiehl
- Sandip Tiwari
- et al.
- 1988
- IEEE Electron Device Letters
Paper5.2-GHz Bandwidth Monolithic GaAs Optoelectronic Receiver
- Christoph S. Harder
- Bart Van Zeghbroeck
- et al.
- 1988
- IEEE Electron Device Letters
Paper