Novel Properties of a 0.1-μm-Long Split-Gate MODFET
- K. Ismail
- K.Y. Lee
- et al.
- 1990
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
PaperSelf-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
PaperSelectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
Paper50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
Paper75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
PaperCollector Signal Delay in the Presence of Velocity Overshoot
- Steven E. Laux
- Wai Lee
- 1990
- IEEE Electron Device Letters
PaperSpatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- Jerzy Kanicki
- D. Jousse
- 1989
- IEEE Electron Device Letters
PaperA Reduced-Field Design Concept for High-Performance Bipolar Transistors
- Denny D. Tang
- Pong-Fei Lu
- 1989
- IEEE Electron Device Letters
PaperHot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IEEE Electron Device Letters
Paper