75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Novel Properties of a 0.1-μm-Long Split-Gate MODFET
- K. Ismail
- K.Y. Lee
- et al.
- 1990
- IEEE Electron Device Letters
PaperCollector Signal Delay in the Presence of Velocity Overshoot
- Steven E. Laux
- Wai Lee
- 1990
- IEEE Electron Device Letters
PaperSelectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
PaperThe Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Paper50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
PaperSelf-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
PaperSidewall Oxidation of Polycrystalline-Silicon Gate
- Joseph Piccirillo
- Arup Bhattacharyya
- et al.
- 1989
- IEEE Electron Device Letters
PaperDemonstration of a p-Channel BICFET in the GexSi1-x/Si System
- R.C. Taft
- James D. Plummer
- et al.
- 1989
- IEEE Electron Device Letters
PaperGraded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
Paper