The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Novel Properties of a 0.1-μm-Long Split-Gate MODFET
- K. Ismail
- K.Y. Lee
- et al.
- 1990
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
Selectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
Spatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- Jerzy Kanicki
- D. Jousse
- 1989
- IEEE Electron Device Letters
p-Channel FET Based on p/n Double-Quantum-Well Heterostructure
- Richard A. Kiehl
- Steven L. Wright
- et al.
- 1989
- IEEE Electron Device Letters
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters