Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy
- Chin-An Chang
- 1982
- Applied Physics Letters
Publications
2347 results at Applied Physics Letters
Contactless measurement of schottky barrier heights using secondary electrons
- H.-C.W. Huang
- P.S. Ho
- 1982
- Applied Physics Letters
Are interface states consistent with Schottky barrier measurements
- J. Freeouf
- 1982
- Applied Physics Letters
Quasi-equilibrium beam-plasma dynamics
- R.A. McCorkle
- 1982
- Applied Physics Letters
Molecular beam epitaxy of AlSb
- Chin-An Chang
- H. Takaoka
- et al.
- 1982
- Applied Physics Letters
Ablative hole formation process in thin tellurium and tellurium-alloy films
- M. Chen
- V. Marrello
- et al.
- 1982
- Applied Physics Letters
Ultra-low-noise tunnel junction dc SQUID with a tightly coupled planar input coil
- M.B. Ketchen
- J.M. Jaycox
- 1982
- Applied Physics Letters
Laser enhanced etching in KOH
- R.J. Von Gutfeld
- R.T. Hodgson
- 1982
- Applied Physics Letters
Raman scattering characterization of Ga1-xAlxAs/GaAs heterojunctions: Epilayer and interface
- P. Parayanthal
- Fred H. Pollak
- et al.
- 1982
- Applied Physics Letters
Microwave-induced "Devil's Staircase" structure and "chaotic" behavior in current-fed Josephson junctions
- E. Ben-Jacob
- Y. Braiman
- et al.
- 1981
- Applied Physics Letters