Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Gaseous products from the reaction of XeF2 with silicon
- Harold F. Winters
- F.A. Houle
- 1983
- Journal of Applied Physics
PaperHydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors
- R. Gale
- F.J. Feigl
- et al.
- 1983
- Journal of Applied Physics
PaperWall oscillations of domain lattices in underdamped garnet films
- B.E. Argyle
- W. Jantz
- et al.
- 1983
- Journal of Applied Physics
PaperInterface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
- J.E.E. Baglin
- F.M. D'Heurle
- et al.
- 1983
- Journal of Applied Physics
PaperBand-gap narrowing from luminescence in p-type Si
- William P. Dumke
- 1983
- Journal of Applied Physics
PaperStrain effects associated with SiO layers evaporated onto GaAs
- H. Booyens
- G.R. Proto
- et al.
- 1983
- Journal of Applied Physics
PaperInterdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation
- H.T.G. Hentzell
- K.N. Tu
- 1983
- Journal of Applied Physics
PaperInterface trap generation in silicon dioxide when electrons are captured by trapped holes
- S.K. Lai
- 1983
- Journal of Applied Physics
PaperInterdiffusion-induced surface morphology in lead-alloy Josephson tunnel junction electrodes
- H.-C.W. Huang
- R.G. Schad
- 1983
- Journal of Applied Physics
Paper