Photo-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors
- P.M. Mooney
- 1983
- Journal of Applied Physics
Publications
2357 results at Journal of Applied Physics
Electron microscope studies of a Ge-GaAs superlattice grown by molecular beam epitaxy
- T.S. Kuan
- C.A. Chang
- 1983
- Journal of Applied Physics
Photolithography experiments using forced Rayleigh scattering
- M. Levenson
- 1983
- Journal of Applied Physics
Temperature dependence of structural and electrical properties of Ta-Si thin alloy films
- T. Tien
- G. Ottaviani
- et al.
- 1983
- Journal of Applied Physics
On the calculation of differential mobility
- Peter J. Price
- 1983
- Journal of Applied Physics
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics
Optically generated light beam deflection
- Gerald Roosen
- Glenn T. Sincerbox
- 1983
- Journal of Applied Physics
Investigation of the Al/TiSi2/Si contact system
- Chung Yu Ting
- Marc Wittmer
- 1983
- Journal of Applied Physics
Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors
- R. Gale
- F.J. Feigl
- et al.
- 1983
- Journal of Applied Physics
The preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition
- B.S. Meyerson
- B.A. Scott
- et al.
- 1983
- Journal of Applied Physics