Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system
- K.N. Tu
- G. Ottaviani
- et al.
- 1983
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Interfacial reaction and Schottky barrier between Pt and GaAs
- C. Fontaine
- T. Okumura
- et al.
- 1983
- Journal of Applied Physics
PaperDegradation of thin tellurium films
- Wen-Yaung Lee
- R.H. Geiss
- 1983
- Journal of Applied Physics
PaperTunneling current density j(V) for Pb-In-Au alloy junctions and tunnel barrier modeling
- J.H. Magerlein
- 1983
- Journal of Applied Physics
PaperPhotoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy
- E. Mendez
- M. Heiblum
- et al.
- 1983
- Journal of Applied Physics
PaperElectrical properties of amorphous tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- A. Reisman
- 1983
- Journal of Applied Physics
PaperThermal stability of Pb-alloy Josephson junction electrode materials. VII. Concentration range of single ε-phase Pb-Bi films used in counterelectrodes
- Masanori Murakami
- H.-C.W. Huang
- et al.
- 1983
- Journal of Applied Physics
PaperA study of the electrical and luminescence characteristics of a novel Si-based thin film electroluminescent device
- D.J. Robbins
- D.J. Dimaria
- et al.
- 1983
- Journal of Applied Physics
PaperReduction of contact resistivity by As redistribution during Pd 2Si formation
- I. Ohdomari
- M. Hori
- et al.
- 1983
- Journal of Applied Physics
PaperPhoto-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors
- P.M. Mooney
- 1983
- Journal of Applied Physics
Paper