Ambient and dopant effects on boron diffusion in oxides
- C.Y. Wong
- F.S. Lai
- 1986
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Stacking faults in WSi2: Resistivity effects
- F.M. d'Heurle
- F.K. LeGoues
- et al.
- 1986
- Applied Physics Letters
PaperAbsence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces
- L.J. Brillson
- M.L. Slade
- et al.
- 1986
- Applied Physics Letters
PaperMaterial reaction and silicide formation at the refractory metal/silicon interface
- G.W. Rubloff
- R.M. Tromp
- et al.
- 1986
- Applied Physics Letters
PaperUnpinned (100) GaAs surfaces in air using photochemistry
- S.D. Offsey
- J. Woodall
- et al.
- 1986
- Applied Physics Letters
PaperNew phase change material for optical recording with short erase time
- Roger Barton
- Charles R. Davis
- et al.
- 1986
- Applied Physics Letters
PaperStudies of excimer laser ablation of solids using a Michelson interferometer
- R.E. Walkup
- J.M. Jasinski
- et al.
- 1986
- Applied Physics Letters
PaperSilicon near-surface disorder and etch residues caused by CCIF 3/H2 reactive ion etching
- G.S. Oehrlein
- C.M. Ransom
- et al.
- 1985
- Applied Physics Letters
PaperTungsten-platinum alloy Schottky barriers on n-type GaAs
- T. Okumura
- K.N. Tu
- 1985
- Applied Physics Letters
PaperDoping effects in reactive plasma etching of heavily doped silicon
- Young H. Lee
- Mao-Min Chen
- et al.
- 1985
- Applied Physics Letters
Paper