Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation
- H.T.G. Hentzell
- K.N. Tu
- 1983
- Journal of Applied Physics
Publications
2360 results at Journal of Applied Physics
Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation
- H.T.G. Hentzell
- R.D. Thompson
- et al.
- 1983
- Journal of Applied Physics
Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
- M. Heiblum
- E. Mendez
- et al.
- 1983
- Journal of Applied Physics
Study of polyacetylene and composites of polyacetylene/polyethylene by electron nuclear double resonance, electron nuclear nuclear triple resonance, and electron spin echo spectroscopies
- L. Dalton
- H. Thomann
- et al.
- 1983
- Journal of Applied Physics
Characterization of plasma-enhanced chemically-vapor-deposited silicon-rich silicon dioxide/thermal silicon dioxide dual dielectric systems
- S. Yokoyama
- D.W. Dong
- et al.
- 1983
- Journal of Applied Physics
Interfacial reaction and Schottky barrier between Pt and GaAs
- C. Fontaine
- T. Okumura
- et al.
- 1983
- Journal of Applied Physics
Tunneling current density j(V) for Pb-In-Au alloy junctions and tunnel barrier modeling
- J.H. Magerlein
- 1983
- Journal of Applied Physics
Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors
- R. Gale
- F.J. Feigl
- et al.
- 1983
- Journal of Applied Physics
Electrical properties of amorphous tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- A. Reisman
- 1983
- Journal of Applied Physics
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics