Influence of sputtering damage on chemical interactions at Cr-SiO 2 interfaces
- A. Cros
- A.G. Schrott
- et al.
- 1986
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2
- L. Krusin-Elbaum
- G.A. Sai-Halasz
- 1986
- Applied Physics Letters
PaperX-ray photoelectron spectroscopy on surface oxidation of silicon by some cleaning procedures
- C.Y. Wong
- S. Klepner
- 1986
- Applied Physics Letters
PaperScanning tunneling potentiometry
- P. Muralt
- D. Pohl
- 1986
- Applied Physics Letters
PaperPicosecond studies of electron confinement in simple colored glasses
- J. Warnock
- D.D. Awschalom
- 1986
- Applied Physics Letters
PaperOrigin of]] residual" persistent photoconductivity in selectively doped GaAs/AlxGa1-xAs heterojunctions
- T.N. Theis
- S.L. Wright
- 1986
- Applied Physics Letters
PaperStability of multilayers for synchrotron optics
- E. Ziegler
- Y. Lepetre
- et al.
- 1986
- Applied Physics Letters
PaperStructure and bonding at the CaF2/Si (111) interface
- F.J. Himpsel
- F.U. Hillebrecht
- et al.
- 1986
- Applied Physics Letters
PaperTransmission electron microscopic observations of amorphous NiZr alloy formation by solid-state reaction
- S.B. Newcomb
- K.N. Tu
- 1986
- Applied Physics Letters
Paper100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon
- T.L. Lin
- S.C. Chen
- et al.
- 1986
- Applied Physics Letters
Paper