Hot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)
- T.N. Theis
- B.D. Parker
- et al.
- 1986
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Enhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena
- F.F. Morehead
- R.F. Lever
- 1986
- Applied Physics Letters
PaperSimultaneous optical pulse compression and wing reduction
- N.J. Halas
- D. Grischkowsky
- 1986
- Applied Physics Letters
PaperAmbient dependence of metal diffusion through a less-electronegative metal layer
- Chin-An Chang
- Helen L. Yeh
- 1986
- Applied Physics Letters
PaperTime-of-flight measurements of minority-carrier transport in p-silicon
- D.D. Tang
- F. Fang
- et al.
- 1986
- Applied Physics Letters
PaperDetermination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
- T.E. Schlesinger
- T.F. Kuech
- 1986
- Applied Physics Letters
PaperSymmetry forbidden Raman scattering from (100) surfaces of oxidized Si and Ge
- J.C. Tsang
- 1986
- Applied Physics Letters
PaperScanning thermal profiler
- C.C. Williams
- H.K. Wickramasinghe
- 1986
- Applied Physics Letters
PaperElectron states in narrow gate-induced channels in Si
- Steven E. Laux
- Frank Stern
- 1986
- Applied Physics Letters
PaperNondestructive depth profiling of carrier lifetimes in full silicon wafers
- D. Guidotti
- J.S. Batchelder
- et al.
- 1986
- Applied Physics Letters
Paper