Transient capacitance study of defects introduced by electron-beam deposition of metals on p-type silicon
- F.D. Auret
- P.M. Mooney
- 1984
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Deep levels introduced during electron-beam deposition of metals on n-type silicon
- F.D. Auret
- P.M. Mooney
- 1984
- Journal of Applied Physics
PaperReversal in the growth or dissolution of III-V heterostructures by liquid phase epitaxy
- M.B. Small
- R. Ghez
- 1984
- Journal of Applied Physics
PaperA new method for determining electron beam proximity correction parameters in a double layer siloxane-diazo resist system
- Fletcher Jones
- Jurij Paraszczak
- et al.
- 1984
- Journal of Applied Physics
PaperEnhanced conduction and minimized charge trapping in electrically alterable read-only memories using off-stoichiometric silicon dioxide films
- D.J. DiMaria
- D.W. Dong
- et al.
- 1984
- Journal of Applied Physics
PaperCryogenic temperature mechanical behavior of solid mercury
- S. Purushothaman
- T. Caulfield
- 1984
- Journal of Applied Physics
PaperSome properties of crystallized tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- F.M. D'Heurle
- et al.
- 1984
- Journal of Applied Physics
PaperSize effects in Pb-alloy Josephson junctions
- J.C. DeLuca
- C.C. Chi
- et al.
- 1984
- Journal of Applied Physics
PaperDirect measurement of proton straggling in GaAlAs for nuclear profiling
- A. Bond
- P. Parayanthal
- et al.
- 1984
- Journal of Applied Physics
PaperStructure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates
- P.A. Psaras
- R.D. Thompson
- et al.
- 1984
- Journal of Applied Physics
Paper