ZrN diffusion barrier in aluminum metallization schemesL. Krusin-ElbaumM. Wittmeret al.1983Thin Solid FilmsPaper
Atomic motion of dopant during interfacial silicide formationM. WittmerC.-Y. Tinget al.1983Thin Solid FilmsPaper
Formation and crystallization of amorphous silicides at the interface between thin metal and amorphous silicon filmsS.R. HerdK.Y. Ahnet al.1983Thin Solid FilmsPaper
Ellipsometry and reflection, luminescence and Raman spectroscopies of monolayer assemblies on solid substratesW. KnollJ. Rabeet al.1983Thin Solid FilmsPaper
Rapid writing of fine lines in Langmuir-Blodgett films using electron beamsA.N. BroersM. Pomerantz1983Thin Solid FilmsPaper
General aspects of barrier layers for very-large-scale integration applications I: ConceptsP.S. Ho1982Thin Solid FilmsPaper
The use of titanium-based contact barrier layers in silicon technologyC.-Y. TingM. Wittmer1982Thin Solid FilmsPaper