IVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Development and Experimental Verification of a Two-Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFET’s
- Jean-Claude Ramirez
- Patrick J. Mcnally
- et al.
- 1988
- IEEE T-ED
PaperHigh-Field-Induced Degradation in Ultra-Thin SiO2 Films
- Piero Olivo
- Thao N. Nguyen
- et al.
- 1988
- IEEE T-ED
PaperOn the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
PaperIA-3 First Observation of Ballistic Holes in a p-Type THETA Device
- M. Heiblum
- K. Seo
- et al.
- 1988
- IEEE T-ED
PaperOxide-Thickness Determination in Thin-Insulator MOS Structures
- Bruno Ricco
- Piero Olivo
- et al.
- 1988
- IEEE T-ED
PaperA Permeable-Base Switching Device Using Stacked Layers of Silicon, Silicon Dioxide, and Silicon-Rich Silicon Dioxide
- D.J. Dimaria
- Maurizio Arienzo
- 1987
- IEEE T-ED
PaperNonideal Base Current in Bipolar Transistors at Low Temperatures
- Jason C. S. Woo
- James D. Plummer
- et al.
- 1987
- IEEE T-ED
PaperIIA-2 Saturable Charge FET
- P. Solomon
- D.J. Frank
- et al.
- 1987
- IEEE T-ED
PaperA study of channel avalanche breakdown in scaled n-mosfet’s
- Steven E. Laux
- Fritz H. Gaensslen
- 1987
- IEEE T-ED
Paper