Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
A Model for Anomalous Short-Channel Behavior in Submicron MOSFET’s
- H.I. Hanafi
- Y. Lii
- et al.
- 1993
- IEEE Electron Device Letters
PaperReliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar Transistors
- Joachim N. Burghartz
- Yuh-Jier Mii
- 1993
- IEEE Electron Device Letters
PaperAnomalous Voltage Overshoot During Turn-Off of Thin-Film n-Channel SOI MOSFET's
- E. Dubois
- Ghavam G. Shahidi
- et al.
- 1993
- IEEE Electron Device Letters
PaperIndium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
PaperArsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
PaperA New Damascene Structure for Submicrometer Interconnect Wiring
- Rajiv V. Joshi
- 1993
- IEEE Electron Device Letters
PaperHigh-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
PaperExperimental Verification of the Mechanism of Hot-Carrier-Induced Photon Emission in N-MOSFET's using an Overlapping CCD Gate Structure
- Hon-Sum Wong
- 1992
- IEEE Electron Device Letters
PaperMetal Migration into Polysilicon Emitter After Very High Current Stress
- Denny D. Tang
- Catherine Wong
- et al.
- 1992
- IEEE Electron Device Letters
Paper