High-Performance Si/SiGe n-Type Modulation-Doped Transistors
- Khaled Ismail
- S. Rishton
- et al.
- 1993
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Gate current injection in MOSFET's with a split-gate (virtual drain) structure
- H.-S. Wong
- 1993
- IEEE Electron Device Letters
PaperOn the Effects of Hydrogen in p-n-p Transistors under Forward Current Stress in a C-BiCMOS Technology
- J.Y.C. Sun
- Maw-Rong Chin
- 1993
- IEEE Electron Device Letters
PaperArsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
PaperCurrent Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
PaperA New Damascene Structure for Submicrometer Interconnect Wiring
- Rajiv V. Joshi
- 1993
- IEEE Electron Device Letters
PaperA Model for Anomalous Short-Channel Behavior in Submicron MOSFET’s
- H.I. Hanafi
- Y. Lii
- et al.
- 1993
- IEEE Electron Device Letters
PaperHigh-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
PaperA New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
PaperInP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
Paper