Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline silicon
- C.Y. Wong
- C.R.M. Grovenor
- et al.
- 1985
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Transient capacitance study of electron traps in AlGaAs grown with As 2
- P.M. Mooney
- R. Fischer
- et al.
- 1985
- Journal of Applied Physics
PaperLocalization and magnetic properties in cerium compounds
- J.L. Tholence
- P. Haen
- et al.
- 1985
- Journal of Applied Physics
PaperSynthesis of compound thin films by dual ion beam deposition. II. Properties of aluminum-nitrogen films
- H.T.G. Hentzell
- J.M.E. Harper
- et al.
- 1985
- Journal of Applied Physics
PaperHot-electron-induced defects at the Si-SiO2 interface at high fields at 295 and 77 K
- M.V. Fischetti
- B. Riccó
- 1985
- Journal of Applied Physics
PaperPhase transformations of alloys on a reactive substrate: Interaction of binary alloys of transition and rare-earth metals with silicon
- R.D. Thompson
- K.N. Tu
- et al.
- 1985
- Journal of Applied Physics
PaperArsenic segregation to silicon/silicon oxide interfaces
- C.Y. Wong
- C.R.M. Grovenor
- et al.
- 1985
- Journal of Applied Physics
PaperThe effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface
- M.V. Fischetti
- Z.A. Weinberg
- et al.
- 1985
- Journal of Applied Physics
PaperConsequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors
- J.A. Van Vechten
- J.F. Wager
- 1985
- Journal of Applied Physics
PaperConductivity and magnetic properties of TmSe and TmS: Comparison to the dilute cases
- F. Holtzberg
- J. Flouquet
- et al.
- 1985
- Journal of Applied Physics
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